Circuits having programmable impedance elements

An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path to the first portion, the second portion including a plurality of nonvolatile memory cells, each nonvolatile memory cell including at least...

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Main Authors HOLLMER SHANE CHARLES, NAVEH ISHAI, DERHACOBIAN NARBEH
Format Patent
LanguageEnglish
Published 01.04.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Abstract An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path to the first portion, the second portion including a plurality of nonvolatile memory cells, each nonvolatile memory cell including at least one resistive element programmable more than once between different resistance values. A memory device may also include variable impedance elements accessible by access bipolar junction transistors (BJTs) having at least a portion formed by a semiconductor layer formed over a substrate. A memory device may also include a plurality of memory elements that each includes a dielectric layer formed between a first and second electrode, the dielectric layer including a solid electrolyte with a soluble metal having a mobility less than that of silver in a germanium disulfide.
AbstractList An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path to the first portion, the second portion including a plurality of nonvolatile memory cells, each nonvolatile memory cell including at least one resistive element programmable more than once between different resistance values. A memory device may also include variable impedance elements accessible by access bipolar junction transistors (BJTs) having at least a portion formed by a semiconductor layer formed over a substrate. A memory device may also include a plurality of memory elements that each includes a dielectric layer formed between a first and second electrode, the dielectric layer including a solid electrolyte with a soluble metal having a mobility less than that of silver in a germanium disulfide.
Author NAVEH ISHAI
HOLLMER SHANE CHARLES
DERHACOBIAN NARBEH
Author_xml – fullname: HOLLMER SHANE CHARLES
– fullname: NAVEH ISHAI
– fullname: DERHACOBIAN NARBEH
BookMark eNrjYmDJy89L5WTQd84sSi7NLClWyEgsy8xLVygoyk8vSszNTUzKSVXIzC1ITUnMS05VSM1JzU3NKynmYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWZhbmJgbGTobGRCgBAAD4LOs
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID US8687403B1
GroupedDBID EVB
ID FETCH-epo_espacenet_US8687403B13
IEDL.DBID EVB
IngestDate Fri Jul 19 14:50:20 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US8687403B13
Notes Application Number: US201113157713
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140401&DB=EPODOC&CC=US&NR=8687403B1
ParticipantIDs epo_espacenet_US8687403B1
PublicationCentury 2000
PublicationDate 20140401
PublicationDateYYYYMMDD 2014-04-01
PublicationDate_xml – month: 04
  year: 2014
  text: 20140401
  day: 01
PublicationDecade 2010
PublicationYear 2014
RelatedCompanies NAVEH ISHAI
ADESTO TECHNOLOGIES CORPORATION
HOLLMER SHANE CHARLES
DERHACOBIAN NARBEH
RelatedCompanies_xml – name: NAVEH ISHAI
– name: ADESTO TECHNOLOGIES CORPORATION
– name: DERHACOBIAN NARBEH
– name: HOLLMER SHANE CHARLES
Score 2.9291074
Snippet An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title Circuits having programmable impedance elements
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140401&DB=EPODOC&locale=&CC=US&NR=8687403B1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3JasMwEB1Cut5at6VJF3Qovpm4XhTnYAqWbUIhC01ccguWLBcf6oTYob9fSXHSXtqrBGIk8TQa6b0ZgCcLu7nLKDM8nueGgzPTSFPHMvCA2umzrG6rFN6jMR4mzuvCXbSg2GthVJ7QL5UcUSCKCbzX6rxe_zxihYpbWfVoIZpWL_HcD_UmOpa5YkRsHAZ-NJ2EE6IT4iczffzme1jWnrMDESgdiVt0X4Iheg-kKGX926PEF3A8FYOV9SW0eKnBGdkXXtPgdNT8d2twogiarBKNDQirK-iRYsO2RV0hqbAvP1DDsfqUKihUiHtwJrcS8R0zvLoGFEdzMjSEDcvDfJfJ7GCtfQPtclXyW0A2l8nY-zY1Pcdx8zxl2LSoy1LL5JnHcAc6fw7T_afvDs7lwu3YKPfQrjdb_iAcbU0f1RJ9A6T9gqk
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT4MwFH9Z5se8KWqcnxwMNzLko8MDMQFGUAdbHJjdCJRiOMiWweK_b9ux6UWvbdK8tvn19bW_33sA9yoyCgNnWDZJUcg6yhU5TXVVRo-Zlj6w6rZc4R2EyI_1l7kx70C51cLwPKFfPDkiRRSmeG_4eb38ecRyObeyHmQlbVo8eZHlSm10zHLF0NjYta3RdOJOHMlxrHgmhW-WiVjtOc2mgdIevWEPGRhG7zYTpSx_exTvGPandLCqOYEOqQToOdvCawIcBu1_twAHnKCJa9rYgrA-hYFTrvC6bGqRKeyrD7HlWH0yFZRY0ntwzrZSJBtmeH0GojeKHF-mNiS7-SbxbGetdg7dalGRCxA1wpKxD7VMMXXdKIoUI0XNDJyqCslNjPrQ_3OYy3_67qDnR8E4GT-Hr1dwxBZxw0y5hm6zWpMb6nSb7JYv1zfxPIWc
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Circuits+having+programmable+impedance+elements&rft.inventor=HOLLMER+SHANE+CHARLES&rft.inventor=NAVEH+ISHAI&rft.inventor=DERHACOBIAN+NARBEH&rft.date=2014-04-01&rft.externalDBID=B1&rft.externalDocID=US8687403B1