Circuits having programmable impedance elements

An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path to the first portion, the second portion including a plurality of nonvolatile memory cells, each nonvolatile memory cell including at least...

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Bibliographic Details
Main Authors HOLLMER SHANE CHARLES, NAVEH ISHAI, DERHACOBIAN NARBEH
Format Patent
LanguageEnglish
Published 01.04.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:An integrated circuit (IC) device may include a first portion having a plurality of volatile memory cells; and a second portion coupled by a data transfer path to the first portion, the second portion including a plurality of nonvolatile memory cells, each nonvolatile memory cell including at least one resistive element programmable more than once between different resistance values. A memory device may also include variable impedance elements accessible by access bipolar junction transistors (BJTs) having at least a portion formed by a semiconductor layer formed over a substrate. A memory device may also include a plurality of memory elements that each includes a dielectric layer formed between a first and second electrode, the dielectric layer including a solid electrolyte with a soluble metal having a mobility less than that of silver in a germanium disulfide.
Bibliography:Application Number: US201113157713