CBRAM/ReRAM with improved program and erase algorithms

Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) sele...

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Bibliographic Details
Main Authors GOPALAKRISHNAN VASUDEVAN, DINH JOHN, HOLLMER SHANE, KOUSHAN FOROOZAN SARAH, LEWIS DERRIC, ECHEVERRY JUAN PABLO SAENZ
Format Patent
LanguageEnglish
Published 25.02.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) selecting an operation algorithm for executing the command, where the operation algorithm is selected from among a plurality of operation algorithms by decoding at least two bits stored in a register; (iii) determining, using the register, a plurality of option variables for the selected operation algorithm, where the option variables are used to set conditions for one or more of a plurality of program and erase operations of the selected operation algorithm; and (iv) executing the command on the programmable impedance element by performing the one or more of the plurality of program and erase operations of the selected operation algorithm.
Bibliography:Application Number: US201213548470