Device and method for boron diffusion in semiconductors

A device and method for semiconductor fabrication includes forming a buffer layer on a semiconductor substrate and depositing an amorphous elemental layer on the buffer layer. Elements of the elemental layer are diffused through the buffer layer and into the semiconductor layer.

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Bibliographic Details
Main Authors DE SOUZA JOEL P, HOPSTAKEN MARINUS, KIM JEEHWAN, SADANA DEVENDRA K
Format Patent
LanguageEnglish
Published 31.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Summary:A device and method for semiconductor fabrication includes forming a buffer layer on a semiconductor substrate and depositing an amorphous elemental layer on the buffer layer. Elements of the elemental layer are diffused through the buffer layer and into the semiconductor layer.
Bibliography:Application Number: US201113013357