Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing

A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate. The substrate includes a source/drain region and a photo cell collector region. The method further include...

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Bibliographic Details
Main Authors BRYANT ANDRES, NOWAK EDWARD J, ELLIS-MONAGHAN JOHN J, CLARK, JR. WILLIAM F, ANDERSON BRENT A
Format Patent
LanguageEnglish
Published 17.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate. The substrate includes a source/drain region and a photo cell collector region. The method further includes forming a non-uniform fixed charge distribution in the gate dielectric. The method further includes forming a gate structure on the gate dielectric.
Bibliography:Application Number: US201313736505