Semiconductor electroluminescent device with a multiple-quantum well layer formed therein

• Main Authors: FUKAMACHI TOSHIHIKO, SHIOTA TAKASHI, NAKAMURA ATSUSHI, KITATANI TAKESHI, SAWADA MITSUHIRO, YASUHARA NOZOMU
• Format: Patent
• Language: English
• Published: 17.12.2013
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.