Local bottom gates for graphene and carbon nanotube devices

Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar wi...

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Bibliographic Details
Main Authors CHEN ZHIHONG, HANNON JAMES B, FRANKLIN AARON D, TULEVSKI GEORGE S
Format Patent
LanguageEnglish
Published 19.11.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided.
Bibliography:Application Number: US201213364273