Substrate processing apparatus and substrate processing method

• Main Authors: HISAI AKIHIRO, IMAMURA MASANORI, SAGAWA HIDETOSHI
• Format: Patent
• Language: English
• Published: 12.11.2013
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; SEMICONDUCTOR DEVICES; SPRAYING OR ATOMISING IN GENERAL; TRANSPORTING

After a solvent is discharged onto a substrate in a period from a time point t0 to a time point t1, rotation of the substrate is started at a time point t2. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t3. A rotation speed of the substrate starts to decrease at a time point t4, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t5. The rotation of the substrate is accelerated in a period from a time point t6 to a time point t7, and the rotation speed of the substrate attains a second speed at the time point t7. The rotation of the substrate is decelerated in a period from the time point t7 to a time point t8, and the rotation speed of the substrate attains a third speed at the time point t8. Here, deceleration of the rotation of the substrate in the period from the time point t7 to the time point t8 is smaller than acceleration of the rotation of the substrate in the period from the time point t6 to the time point t7.