Strained silicon device

A method of manufacturing a microelectronic device includes forming a p-channel transistor on a silicon substrate by forming a poly gate structure over the substrate and forming a lightly doped source/drain region in the substrate. An oxide liner and nitride spacer are formed adjacent to opposing si...

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Bibliographic Details
Main Authors HUANG CHENGUAN, HUANG CHIENAO, YANG FU-LIANG
Format Patent
LanguageEnglish
Published 29.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a microelectronic device includes forming a p-channel transistor on a silicon substrate by forming a poly gate structure over the substrate and forming a lightly doped source/drain region in the substrate. An oxide liner and nitride spacer are formed adjacent to opposing side walls of the poly gate structure and a recess is etched in the semiconductor substrate on opposing sides of the oxide liner. Raised SiGe source/drain regions are formed on either side of the oxide liner and slim spacers are formed over the oxide liner. A hard mask over the poly gate structure is used to protect the poly gate structure during the formation of the raised SiGe source/drain regions. A source/drain dopant is then implanted into the substrate including the SiGe regions.
Bibliography:Application Number: US20060549002