Resistance random access memory including variable-resistance layers

According to one embodiment, there are provided a first electrode, a second electrode, first and second variable-resistance layers that are arranged between the first electrode and the second electrode, and at least one non variable-resistance layer that is arranged so that positions of the first an...

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Bibliographic Details
Main Authors KIYOTOSHI MASAHIRO, SATO MITSURU, FUJITSUKA RYOTA, SEKINE KATSUYUKI
Format Patent
LanguageEnglish
Published 15.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, there are provided a first electrode, a second electrode, first and second variable-resistance layers that are arranged between the first electrode and the second electrode, and at least one non variable-resistance layer that is arranged so that positions of the first and second variable-resistance layers between the first electrode and the second electrode are symmetrical to each other.
Bibliography:Application Number: US201113097375