Pixel sensor cells with a split-dielectric transfer gate

Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. A transistor in the pixel sensor cell has a gate structure that includes a gate dielectric with a thick region and a thin region. A gate electrode of the gate structure is formed on the thic...

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Bibliographic Details
Main Authors BRYANT ANDRES, ELLIS-MONAGHAN JOHN JOSEPH, NOWAK EDWARD J, CLARK, JR. WILLIAM F, ANDERSON BRENT A
Format Patent
LanguageEnglish
Published 15.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. A transistor in the pixel sensor cell has a gate structure that includes a gate dielectric with a thick region and a thin region. A gate electrode of the gate structure is formed on the thick region of the gate dielectric and the thin region of the gate dielectric. The thick region of the gate dielectric and the thin region of the gate dielectric provide the transistor with an asymmetric threshold voltage.
Bibliography:Application Number: US201113005650