Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing

Passivation integration schemes and pad structures to reduce the stress gradients and/or improve the contact surface existing between the Al in the pad and the gold wire bond. One of the pad structures provides a plurality of recessed pad areas which are formed in a single aluminum pad. An oxide mes...

Full description

Saved in:
Bibliographic Details
Main Authors PALLINTI JAYANTHI, SUN SEY-SHING, BHATT HEMANSHU, KAO CHIYI, YING HONG, VIJAY DILIP
Format Patent
LanguageEnglish
Published 08.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Passivation integration schemes and pad structures to reduce the stress gradients and/or improve the contact surface existing between the Al in the pad and the gold wire bond. One of the pad structures provides a plurality of recessed pad areas which are formed in a single aluminum pad. An oxide mesa can be provided under the aluminum pad. Another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a copper pad and a plurality of trench/via pads. Still another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a portion of a copper pad, such that the aluminum pad and the copper pad are staggered relative to each other.
Bibliography:Application Number: US20050283219