Method and apparatus for thermal analysis of through-silicon via (TSV)

Some embodiments of the invention provide a method for performing thermal analysis of an integrated circuit ("IC") design layout. The IC design layout includes several wiring layers in some embodiments. The IC design layout includes a substrate that has at least one through-silicon via (&q...

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Bibliographic Details
Main Authors KARIAT VINOD, PRAMONO EDDY, ZHAN YONG
Format Patent
LanguageEnglish
Published 24.09.2013
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:Some embodiments of the invention provide a method for performing thermal analysis of an integrated circuit ("IC") design layout. The IC design layout includes several wiring layers in some embodiments. The IC design layout includes a substrate that has at least one through-silicon via ("TSV"). The method divides the IC design layout into a set of elements. The method identifies a temperature distribution for the IC design layout by using the set of elements. In some embodiments, at least one element includes a metal component and a non-metal component. The non-metal component is silicon in some embodiments, and a dielectric in other embodiments.
Bibliography:Application Number: US201113290047