Earth abundant photonic structures

The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.

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Bibliographic Details
Main Authors CLARK ANDREW, WILLIAMS DAVID, ARKUN F. ERDEM, SMITH ROBIN, LEBBY MICHAEL S
Format Patent
LanguageEnglish
Published 24.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.
Bibliography:Application Number: US20110932979