Integrated circuit system with through silicon via and method of manufacture thereof

A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device af...

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Bibliographic Details
Main Authors TAN DENISE, HSIA LIANGOO, LEK CHUNG MENG, LAM JEFFREY C, YELEHANKA PRADEEP RAMACHANDRAMURTHY, THIAM THOMAS
Format Patent
LanguageEnglish
Published 17.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
Bibliography:Application Number: US201213455152