Method for selectively forming crystalline silicon layer regions above gate electrodes

Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in re...

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Bibliographic Details
Main Authors SUGAWARA YUTA, MATSUMOTO MITSUTAKA
Format Patent
LanguageEnglish
Published 10.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions.
Bibliography:Application Number: US201213495387