Method and apparatus for reducing read disturb in memory

Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution-a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.

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Bibliographic Details
Main Authors LIU TSENG-YI, HUNG CHUN-HSIUNG, HUNG SHUO-NAN
Format Patent
LanguageEnglish
Published 03.09.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution-a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.
Bibliography:Application Number: US201213406215