Low-rate electrochemical etch of thin film metals and alloys

Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the su...

Full description

Saved in:
Bibliographic Details
Main Authors MEDINA JOSE A, JIANG TIFFANY YUN WEN, JIANG MING
Format Patent
LanguageEnglish
Published 03.09.2013
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.
Bibliography:Application Number: US201113221726