Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD...

Full description

Saved in:
Bibliographic Details
Main Authors SHI YUN, STIDHAM MARK E, RASSEL ROBERT M, BOTULA ALAN B
Format Patent
LanguageEnglish
Published 27.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD region extends from the first source drain region into the intrinsic region between the first source drain region and the second source drain region; and a gate positioned atop the semiconductor substrate, wherein an outer edge of the gate overlaps the second source drain region. A related method and design structure are also disclosed.
AbstractList A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD region extends from the first source drain region into the intrinsic region between the first source drain region and the second source drain region; and a gate positioned atop the semiconductor substrate, wherein an outer edge of the gate overlaps the second source drain region. A related method and design structure are also disclosed.
Author SHI YUN
BOTULA ALAN B
RASSEL ROBERT M
STIDHAM MARK E
Author_xml – fullname: SHI YUN
– fullname: STIDHAM MARK E
– fullname: RASSEL ROBERT M
– fullname: BOTULA ALAN B
BookMark eNqNjTsOwjAQBV1Awe8OW4IEBUGI1BAQBV2gjix7cVZydiPbQcrtccEBqKZ4M3pzNWFhnCmpsSMjbAeTJIDFDxkEYuMHS-xAx7HrMAUy4Mm1yY9gpUcLNmhiWD-qagMBHQlvM71OectBKxY0Zw0jOYaYQj4YAi7V9K19xNWPCwW36_Ny32EvDcZeG2RMzasuj_vyVBbn4vCH8gXgJkRK
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US8518782B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US8518782B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:06:02 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US8518782B23
Notes Application Number: US20100963054
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130827&DB=EPODOC&CC=US&NR=8518782B2
ParticipantIDs epo_espacenet_US8518782B2
PublicationCentury 2000
PublicationDate 20130827
PublicationDateYYYYMMDD 2013-08-27
PublicationDate_xml – month: 08
  year: 2013
  text: 20130827
  day: 27
PublicationDecade 2010
PublicationYear 2013
RelatedCompanies SHI YUN
INTERNATIONAL BUSINESS MACHINES CORPORATION
BOTULA ALAN B
RASSEL ROBERT M
STIDHAM MARK E
RelatedCompanies_xml – name: RASSEL ROBERT M
– name: INTERNATIONAL BUSINESS MACHINES CORPORATION
– name: SHI YUN
– name: BOTULA ALAN B
– name: STIDHAM MARK E
Score 2.9083698
Snippet A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130827&DB=EPODOC&locale=&CC=US&NR=8518782B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVbG-mIMEBYu2SZP0EIQmLUW0LbaV3kqT3UCh3S19IP33zmwfetFbyIZls2Hmm8nOfB_AnV2RfsVN-YRRpgWHMIL8YOoUfNcm5ycIQYemQLbpNnrOa7_cz8Bo2wtjeEK_DDkiWVRC9r4w_nr68xMrMrWV86d4RLf0S70bRNYmOy4y-YpnRdWg1m5FrdAKw6DXsZofAQUWPoFhlbz1HkfRTLNf-6xyU8r0N6LUj2G_TZOpxQlkpMrBYbgVXsvBwfvmvJsuN6Y3PwXd4TJ2rZifVc9QSDZxHKlkvGT4weF8NZmwPFaCY064xysUeioFChaBwPu3KHpAlmHQ6hFNBwuNrfWjcajoMVPKgWs-2eVMngHWa92wUaCVD3a7NOh1du9on0NWaSUvAMu-EIlbLiYEzY7nVeL4mSKAlBIR-gyx7eQh_-c0l_-MXcFRyQhDkJ1515ClxckbgudFfGs29hun15Wj
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8JAEJ4QNOJNUSM-52AaTSQKLW05NCa0EFReETDcSNvdJiSwS3jE8O-dXR560Vuz22y228x8O7sz3wdwZ5a5W7YTdcPIk7xFGEF-MLHyrm2S82OEoKFOkG3Z9b71NigNUjDa1sJontAvTY5IFhWTvS-0v57-HGIFOrdy_hSNqEm-1HpeYGyi44IiX3GMoOJVO-2g7Ru-7_W7RuvDo42FS2BYIW-951BEqGj2q58VVZQy_Y0otSPY79BgYnEMKS6ykPG3wmtZOGhu7rvpcWN68xOQXZXGLoXiZ5UzZFyZOI5EPF4q-MFwvppMlDxWjGMVcI9XyOSUM2RKBALvG0HwgEqGQYpH1BUs1LfWj8ZQ0Gs6lQPXfLLLGT8FrFV7fj1PMx_uVmnY7-6-0TyDtJCCnwOWXMZiu1SICZotxylH0TPtABIKROg3RKaVg9yfw1z803cLmXqv2Rg2Xlvvl3BY1CIRZHPOFaRpovyaoHoR3ehF_gbN2JiO
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+including+asymmetric+lightly+doped+drain+%28LDD%29+region%2C+related+method+and+design+structure&rft.inventor=SHI+YUN&rft.inventor=STIDHAM+MARK+E&rft.inventor=RASSEL+ROBERT+M&rft.inventor=BOTULA+ALAN+B&rft.date=2013-08-27&rft.externalDBID=B2&rft.externalDocID=US8518782B2