Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD...

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Bibliographic Details
Main Authors SHI YUN, STIDHAM MARK E, RASSEL ROBERT M, BOTULA ALAN B
Format Patent
LanguageEnglish
Published 27.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD region extends from the first source drain region into the intrinsic region between the first source drain region and the second source drain region; and a gate positioned atop the semiconductor substrate, wherein an outer edge of the gate overlaps the second source drain region. A related method and design structure are also disclosed.
Bibliography:Application Number: US20100963054