Method of making an inverted-T channel transistor
A method for creating an inverse T field effect transistor is provided. The method includes creating a horizontal active region and a vertical active region on a substrate. The method further comprises forming a sidewall spacer on a first side of the vertical active region and a second side of the v...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
20.08.2013
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Subjects | |
Online Access | Get full text |
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