Method of making an inverted-T channel transistor

• Main Authors: MATHEW LEO, MORA RODE R
• Format: Patent
• Language: English
• Published: 20.08.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for creating an inverse T field effect transistor is provided. The method includes creating a horizontal active region and a vertical active region on a substrate. The method further comprises forming a sidewall spacer on a first side of the vertical active region and a second side of the vertical active region. The method further includes removing a portion of the horizontal active region, which is not covered by the sidewall spacer. The method further includes removing the sidewall spacer. The method further includes forming a gate dielectric over at least a first part of the horizontal active region and at least a first part of the vertical active region. The method further includes forming a gate electrode over the gate dielectric. The method further includes forming a source region and a drain region over at least a second part of the horizontal active region and at least a second part of the vertical active region.