Thin-film capacitor, multilayer wiring board and semiconductor device

A thin-film capacitor with first capacitative elements each having an electrode layer with a first polarity on an upper surface of a dielectric layer and an electrode layer with a second polarity on a lower surface of the dielectric layer; second capacitative elements each having an electrode layer...

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Bibliographic Details
Main Author ROKUHARA SHINJI
Format Patent
LanguageEnglish
Published 30.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin-film capacitor with first capacitative elements each having an electrode layer with a first polarity on an upper surface of a dielectric layer and an electrode layer with a second polarity on a lower surface of the dielectric layer; second capacitative elements each having an electrode layer with the second polarity on the upper surface and an electrode layer with the first polarity on the lower surface and arranged around a specific position alternately with the first capacitative elements; a single common connection hole at the specific position connecting all electrode layers with the first polarity of the first and second capacitative elements; and individual connection holes around the common connection hole connecting each electrode layer with the second polarity of the adjacent and second capacitative elements.
Bibliography:Application Number: US201213523301