Capacitor and method of forming same

A device comprises a substrate having at least one active region, an insulating layer above the substrate, and an electrode in a gate electrode layer above the insulating layer, forming a metal-oxide-semiconductor (MOS) capacitor. A first contact layer is provided on the electrode, having an elongat...

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Bibliographic Details
Main Authors CHEN CHIEN-HUNG, AN CHI-DI, CHAN YU-JUAN
Format Patent
LanguageEnglish
Published 30.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device comprises a substrate having at least one active region, an insulating layer above the substrate, and an electrode in a gate electrode layer above the insulating layer, forming a metal-oxide-semiconductor (MOS) capacitor. A first contact layer is provided on the electrode, having an elongated first pattern extending in a first direction parallel to the electrode. A contact structure contacts the substrate. The contact structure has an elongated second pattern extending parallel to the first pattern. A dielectric material is provided between the first and second patterns, so that the first and second patterns and dielectric material form a side-wall capacitor connected in parallel to the MOS capacitor.
Bibliography:Application Number: US201113221419