Method of fabricating FinFET devices

A semiconductor device is fabricating using a photoresist mask pattern, and selectively removing portions of a liner nitride layer in a cell region and a peripheral circuit region. A modified FinFET is formed to reduce the influence of signals transmitted by adjacent gate lines in a cell region. A d...

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Bibliographic Details
Main Authors KAHNG JAE-ROK, JANG SE-MYEONG, YOSHIDA MAKOTO
Format Patent
LanguageEnglish
Published 30.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is fabricating using a photoresist mask pattern, and selectively removing portions of a liner nitride layer in a cell region and a peripheral circuit region. A modified FinFET is formed to reduce the influence of signals transmitted by adjacent gate lines in a cell region. A double FinFET and a substantially planar MOSFET are formed in a core region and in a peripheral region, respectively, concurrently with the formation of the modified FinFET.
Bibliography:Application Number: US20100766055