Homogeneous porous low dielectric constant materials

In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first t...

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Bibliographic Details
Main Authors BRUCE ROBERT L, RATH DAVID L, DUBOIS GERAUD JEAN-MICHEL, VOLKSEN WILLI, FROT THEO J, MAGBITANG TEDDIE P, PURUSHOTHAMAN SAMPATH
Format Patent
LanguageEnglish
Published 23.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.
Bibliography:Application Number: US201213602957