Semiconductor device having a nonvolatile memory cell with field effect transistors

The present invention can realize a highly-integrated semiconductor device having a MONOS type nonvolatile memory cell equipped with a split gate structure without deteriorating the reliability of the device. A memory gate electrode of a memory nMIS has a height greater by from 20 to 100 nm than tha...

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Bibliographic Details
Main Authors FUNAYAMA KOTA, HOMMA TAKURO, ISHII YASUSHI
Format Patent
LanguageEnglish
Published 11.06.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention can realize a highly-integrated semiconductor device having a MONOS type nonvolatile memory cell equipped with a split gate structure without deteriorating the reliability of the device. A memory gate electrode of a memory nMIS has a height greater by from 20 to 100 nm than that of a select gate electrode of a select nMIS so that the width of a sidewall formed over one (side surface on the side of a source region) of the side surfaces of the memory gate electrode is adjusted to a width necessary for achieving desired disturb characteristics. In addition, a gate electrode of a peripheral second nMIS has a height not greater than the height of a select gate electrode of a select nMIS to reduce the width of a sidewall formed over the side surface of the gate electrode of the peripheral second nMIS so that a shared contact hole is prevented from being filled with the sidewall.
Bibliography:Application Number: US20090534140