Growth of planar, non-polar, group-III nitride films

Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

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Main Authors CRAVEN MICHAEL D, MATSUDA SHIGEMASA, HASKELL BENJAMIN A, DENBAARS STEVEN P, FINI PAUL T, SPECK JAMES S, NAKAMURA SHUJI
Format Patent
LanguageEnglish
Published 28.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
AbstractList Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
Author SPECK JAMES S
NAKAMURA SHUJI
DENBAARS STEVEN P
HASKELL BENJAMIN A
CRAVEN MICHAEL D
FINI PAUL T
MATSUDA SHIGEMASA
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– fullname: SPECK JAMES S
– fullname: NAKAMURA SHUJI
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THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
DENBAARS STEVEN P
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CRAVEN MICHAEL D
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Snippet Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Growth of planar, non-polar, group-III nitride films
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