Growth of planar, non-polar, group-III nitride films

Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

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Bibliographic Details
Main Authors CRAVEN MICHAEL D, MATSUDA SHIGEMASA, HASKELL BENJAMIN A, DENBAARS STEVEN P, FINI PAUL T, SPECK JAMES S, NAKAMURA SHUJI
Format Patent
LanguageEnglish
Published 28.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
Bibliography:Application Number: US20080207407