Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition

A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a requi...

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Bibliographic Details
Main Authors LIANG MUH-WANG, LEE SHENG-LANG, HUANG JEN-RONG, DU CHENUNG, CHANG CHIA-HAO
Format Patent
LanguageEnglish
Published 07.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Halpha and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Halpha within an allowed range of a target value for improving film depositing rate.
Bibliography:Application Number: US20100758698