Spin transport type magnetic sensor

The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite s...

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Bibliographic Details
Main Authors NOGUCHI KIYOSHI, SASAKI TOMOYUKI, OIKAWA TOHRU
Format Patent
LanguageEnglish
Published 23.04.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.
Bibliography:Application Number: US201213396062