Range modulated implants for image sensors

Image sensors have photodiodes separated by isolations regions formed from p-well or n-well implants. Isolation regions may be formed that are narrow and deep. Isolation regions may be formed in a multi-step process that selectively places implants at desired depths in a substrate. Complementary pho...

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Bibliographic Details
Main Author NAGARAJA SATYADEV
Format Patent
LanguageEnglish
Published 02.04.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Image sensors have photodiodes separated by isolations regions formed from p-well or n-well implants. Isolation regions may be formed that are narrow and deep. Isolation regions may be formed in a multi-step process that selectively places implants at desired depths in a substrate. Complementary photoresist patterns may be used. To form an implant near the surface of a substrate, a photoresist pattern with openings over the desired implant area may be used. Subsequent implantation may use a complementary pattern such that ions pass through photoresist before implanting in desired regions of a substrate.
Bibliography:Application Number: US20100830856