Synchronized radio frequency pulsing for plasma etching

Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third...

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Bibliographic Details
Main Authors LIAO BRYAN, STOUT PHILLIP, SHOJI SERGIO FUKUDA, KAWASAKI KATSUMASA, RAMASWAMY KARTIK, AGARWAL ANKUR, PATTAR YASHASWINI, NGUYEN DUY D, RAUF SHAHID
Format Patent
LanguageEnglish
Published 26.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
Bibliography:Application Number: US20100851606