Methods for fabricating FinFET semiconductor devices using L-shaped spacers

Methods for fabricating semiconductor structures, such as fin structures of FinFET transistors, are provided. In one embodiment, a method comprises providing a semiconductor substrate and forming a plurality of mandrels overlying the semiconductor substrate. Each of the mandrels has sidewalls. L-sha...

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Bibliographic Details
Main Authors JOHNSON FRANK S, LUNING SCOTT
Format Patent
LanguageEnglish
Published 26.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for fabricating semiconductor structures, such as fin structures of FinFET transistors, are provided. In one embodiment, a method comprises providing a semiconductor substrate and forming a plurality of mandrels overlying the semiconductor substrate. Each of the mandrels has sidewalls. L-shaped spacers are formed about the sidewalls of the mandrels. Each L-shaped spacer comprises a rectangular portion disposed at a base of a mandrel and an orthogonal portion extending from the rectangular portion. Each L-shaped spacer also has a spacer width. The orthogonal portions are removed from each of the L-shaped spacers leaving at least a portion of the rectangular portions. The semiconductor substrate is etched to form fin structures, each fin structure having a width substantially equal to the spacer width.
Bibliography:Application Number: US20090509918