Ion implant apparatus and method of ion implantation

• Main Authors: GILLESPIE JOSEPH, SAKASE TAKAO, HORNER RONALD, SMICK THEODORE, PARK, JR. WILLIAM, EIDE PAUL, RYDING GEOFFREY
• Format: Patent
• Language: English
• Published: 19.02.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; ELECTROTHERAPY; HUMAN NECESSITIES; HYGIENE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAGNETOTHERAPY; MEDICAL OR VETERINARY SCIENCE; METALLURGY; RADIATION THERAPY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; ULTRASOUND THERAPY

An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.