Programming phase change memories using ovonic threshold switches

A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.

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Bibliographic Details
Main Authors TANG STEPHEN, LANGTRY TIMOTHY C, DODGE RICHARD, KAU DERCHANG, CASTRO HERNAN, HIRST JEREMY
Format Patent
LanguageEnglish
Published 12.02.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.
Bibliography:Application Number: US20090642915