Semiconductor capacitor

A semiconductor capacitor and its method of fabrication are disclosed. A non-linear nitride layer is used to increase the surface area of a capacitor plate, resulting in increased capacitance without increase in chip area used for the capacitor.

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Bibliographic Details
Main Authors HORAK DAVID VACLAV, SHOBHA HOSADURGA, PONOTH SHOM, YANG CHIHAO
Format Patent
LanguageEnglish
Published 15.01.2013
Subjects
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Summary:A semiconductor capacitor and its method of fabrication are disclosed. A non-linear nitride layer is used to increase the surface area of a capacitor plate, resulting in increased capacitance without increase in chip area used for the capacitor.
Bibliography:Application Number: US201113165191