Confinement techniques for non-volatile resistive-switching memories

Confirment techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element described herein includes a first elect...

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Bibliographic Details
Main Author PHATAK PRASHANT
Format Patent
LanguageEnglish
Published 23.10.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Confirment techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element described herein includes a first electrode adjacent to an interlayer dielectric, a spacer over at least a portion of the interlayer dielectric and over a portion of the first electrode and a metal oxide layer over the spacer and the first electrode such that an interface between the metal oxide layer and the electrode is smaller than a top surface of the electrode.
Bibliography:Application Number: US201113098680