Structure and method for hard mask removal on an SOI substrate without using CMP process
A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. A blocking material is deposited on a hard mask material after a deep trench reactive ion etch (RIE) process. The blocking material on top of the hard mask material is removed. A selective...
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Main Author | |
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Format | Patent |
Language | English |
Published |
23.10.2012
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Subjects | |
Online Access | Get full text |
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Summary: | A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. A blocking material is deposited on a hard mask material after a deep trench reactive ion etch (RIE) process. The blocking material on top of the hard mask material is removed. A selective wet etching process is used to remove the hard mask material. Trench recess depth is effectively controlled. |
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Bibliography: | Application Number: US201113009056 |