System and method for calibrating a lithography model

• Main Authors: SEZGINER ABDURRAHMAN, CHUYESHOV KOSTYANTYN, PERCIN GOKHAN, CHOW TATUNG, HUANG HSU-TING, CARRERO JESUS ORSELY
• Format: Patent
• Language: English
• Published: 02.10.2012
• Subjects: ACCESSORIES THEREFOR; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM; APPARATUS SPECIALLY ADAPTED THEREFOR; CALCULATING; CINEMATOGRAPHY; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the computational model using the calculated demerit function. The method may also use a second demerit function that is defined by the sum of squares of differences between a simulated and measured critical dimensions of a feature on the wafer.