System and method for calibrating a lithography model

The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the co...

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Bibliographic Details
Main Authors SEZGINER ABDURRAHMAN, CHUYESHOV KOSTYANTYN, PERCIN GOKHAN, CHOW TATUNG, HUANG HSU-TING, CARRERO JESUS ORSELY
Format Patent
LanguageEnglish
Published 02.10.2012
Subjects
ACCESSORIES THEREFOR
APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES
APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the computational model using the calculated demerit function. The method may also use a second demerit function that is defined by the sum of squares of differences between a simulated and measured critical dimensions of a feature on the wafer.
Bibliography:Application Number: US20090536425