Thin film transistor and method of fabricating the same
A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the su...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
25.09.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; and a gate electrode disposed on the insulating layer over the channel region, wherein the semiconductor layer includes tapered edge portions with a taper angle defined between the tapered edge portions and a surface of the substrate is less than about 30 degrees. |
---|---|
Bibliography: | Application Number: US20080314507 |