Semiconductor device and method for manufacturing the same

A semiconductor device including a semiconductor substrate, and a memory cell and a peripheral circuit provided on the semiconductor substrate, the memory cell having a first insulating film, a first electrode layer, a second insulating film, and a second electrode layer provided on the semiconducto...

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Bibliographic Details
Main Authors IGUCHI TADASHI, IWASE MASAO
Format Patent
LanguageEnglish
Published 14.08.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device including a semiconductor substrate, and a memory cell and a peripheral circuit provided on the semiconductor substrate, the memory cell having a first insulating film, a first electrode layer, a second insulating film, and a second electrode layer provided on the semiconductor substrate in order, and the peripheral circuit having the first insulating film, the first electrode layer, the second insulating film having an opening for the peripheral circuit, and the second electrode layer electrically connected to the first electrode layer through the opening for the peripheral circuit, wherein a thickness of the first electrode layer under the second insulating film of the peripheral circuit is thicker than a thickness of the first electrode layer of the memory cell.
Bibliography:Application Number: US20100917689