Method of purifying a crystalline silicon substrate and process for producing a photovoltaic cell
The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
14.08.2012
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and which includes, before said step of extracting the impurities by external gettering, at least one step of rapidly annealing the substrate at a temperature of between 750° C. and 1000° C. inclusive for a time of between 1 second and 10 minutes inclusive. The invention is particularly applicable in the photovoltaic cell field. |
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Bibliography: | Application Number: US20090499602 |