Semiconductor device having a multilayer interconnection structure that includes an etching stopper film

• Main Author: KAGEYAMA SATOSHI
• Format: Patent
• Language: English
• Published: 24.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a lower layer wiring made of a conductive material; an etching stopper film laminated on the lower layer wiring and having a laminated structure including an SiCO layer and an SiCN layer; an interlayer insulating film laminated on the etching stopper film; an intermed...