Semiconductor device with isolation trench liner

A method of manufacturing a semiconductor device is provided herein, where the width effect is reduced in the resulting semiconductor device. The method involves providing a substrate having semiconductor material, forming an isolation trench in the semiconductor material, and lining the isolation t...

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Bibliographic Details
Main Authors CARTER RICHARD J, KLUTH GEORGE J, HARGROVE MICHAEL J
Format Patent
LanguageEnglish
Published 10.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device is provided herein, where the width effect is reduced in the resulting semiconductor device. The method involves providing a substrate having semiconductor material, forming an isolation trench in the semiconductor material, and lining the isolation trench with a liner material that substantially inhibits formation of high-k material thereon. The lined trench is then filled with an insulating material. Thereafter, a layer of high-k gate material is formed over at least a portion of the insulating material and over at least a portion of the semiconductor material. The liner material divides the layer of high-k gate material, which prevents the migration of oxygen over the active region of the semiconductor material.
Bibliography:Application Number: US201113178362