NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same

A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the r...

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Bibliographic Details
Main Authors KWAK DONG-HWA, HWANG BYUNG-JUN, LIM NAM-SU, JIN SO-WI, PARK JANG-HO, PARK JAE-KWAN
Format Patent
LanguageEnglish
Published 03.07.2012
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
Bibliography:Application Number: US20110987795