MIM capacitor of semiconductor device and manufacturing method thereof

A method of manufacturing a MIM capacitor of a semiconductor device and a MIM capacitor. A MIM structure and a metal layer may be formed using a single process. A method of manufacturing a MIM capacitor may include forming a hole on and/or over a lower metal wire region. A method of manufacturing a...

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Bibliographic Details
Main Author YUN JONG-YONG
Format Patent
LanguageEnglish
Published 03.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a MIM capacitor of a semiconductor device and a MIM capacitor. A MIM structure and a metal layer may be formed using a single process. A method of manufacturing a MIM capacitor may include forming a hole on and/or over a lower metal wire region. A method of manufacturing a MIM capacitor may include forming a lower metal layer, an inter-metal dielectric and/or an upper metal layer on and/or over a hole to form a MIM structure. Patterns to form a MIM structure and a metal layer may be formed at substantially the same time. If etching is performed with a photoresist pattern as a mask, a MIM structure and a metal layer structure may be formed at substantially the same time using a single mask.
Bibliography:Application Number: US20090624776