Memory device and method thereof

A first input of a sense amplifier is connected to a first bitline, a second input of the sense amplifier is connected to a second bitline, a third input of the sense amplifier is coupled to a third bitline. The sense amplifier provides at an output an indicator of a storage state of a memory cell c...

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Bibliographic Details
Main Author MORTON BRUCE LEE
Format Patent
LanguageEnglish
Published 29.05.2012
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A first input of a sense amplifier is connected to a first bitline, a second input of the sense amplifier is connected to a second bitline, a third input of the sense amplifier is coupled to a third bitline. The sense amplifier provides at an output an indicator of a storage state of a memory cell connected to the first bitline based upon information provided to the sense amplifier via the first, second, and third bitlines.
Bibliography:Application Number: US20100768299