Non-volatile two-transistor semiconductor memory cell and method for producing the same

• Main Authors: SCHULER FRANZ, TEMPEL GEORG
• Format: Patent
• Language: English
• Published: 10.04.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally delimited memory locations (LB, RB), an electrically no...